Surface Modification of CdE (E: S, Se, and Te) Nanoplatelets to Reach Thicker Nanoplatelets and Homostructures with Confinement-Induced Intraparticle Type I Energy Level Alignment

Two-dimensional II–VI semiconductor nanoplatelets (NPLs) present exceptionally narrow optical features due to their thickness defined at the atomic scale. Because drives band-edge energy, its control is of paramount importance. Here, we demonstrate that native carboxylate ligands can be replaced by halides partially dissolve cadmium chalcogenide NPLs edges. The released monomers then recrystallize on wide top and bottom facets, leading an increase in NPL thickness. This dissolution/recrystallization method used 9 ML while using 3 as starting material. We also this not limited CdSe extended CdS CdTe grow thick NPLs. When metal halide precursor introduced with a NPLs, CdSe/CdSe, CdTe/CdTe, CdSe/CdTe core/shell homo- heterostructures are achieved. Finally, when incomplete layer grown, steps synthesized. These stress-free homostructures comparable type I heterostructures, recombination exciton thicker area Following growth core/crown it affords new degree freedom for structured designed band engineering, which has so far been only achievable heteromaterial nanostructures.